Surface treatment of copper to improve interconnect formation

The present invention provides, in one embodiment, a method of forming a copper layer ( 100 ) over a semiconductor substrate ( 105 ). The method comprises coating a copper seed layer ( 110 ) located over a semiconductor substrate with a protective agent ( 120 ) to form a protective layer ( 125 ). Th...

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Bibliographic Details
Main Authors AGGARWAL SANJEEV, HURD TRACE Q, HALL LINDSEY
Format Patent
LanguageEnglish
Published 07.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides, in one embodiment, a method of forming a copper layer ( 100 ) over a semiconductor substrate ( 105 ). The method comprises coating a copper seed layer ( 110 ) located over a semiconductor substrate with a protective agent ( 120 ) to form a protective layer ( 125 ). The method also includes placing the semiconductor substrate in an acid bath ( 145 ) to remove the protective layer. The method further includes electrochemically depositing a second copper layer ( 155 ) on the copper seed layer. Such methods and resulting conductive structures thereof may be advantageously used in methods to manufacture integrated circuits comprising copper interconnects.
Bibliography:Application Number: US20040848219