Plasma processing system control

• Main Authors: MARAKHTANOV ALEXEI M, HUDSON ERIC ALLEN, SADJADI S. M. REZA
• Format: Patent
• Language: English
• Published: 06.12.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS

A method of approximating an ion energy distribution function (IEDF) at a substrate surface of a substrate, the substrate being processed in a plasma processing chamber. There is included providing a first voltage value, the first voltage value representing a value of a first voltage that represents a DC potential (VDC) at the substrate surface. There is also included providing a peak low frequency RF voltage value (VLFRF(PEAK)) during plasma processing, the peak low frequency RF voltage (VLFRF(PEAK)) value representing a peak value of a low frequency RF voltage (VLFRF) supplied to the plasma processing chamber. There is further included providing a computing device configured to compute the IEDF from the first voltage value and the peak low frequency RF voltage value (VLFRF(PEAK)) in accordance with f ⁡ ( E ) ≡ ( ⅆ V LF ⅆ t ) - 1 , wherein V LF ⁡ ( t ) = [ ( V LFRF ⁡ ( PEAK ) - V dc 2 ) 1 / 2 - ( V LFRF ⁡ ( PEAK ) - V dc 8 ) 1 / 2 ⁢ sin ⁢ ⁢ omega ⁢ ⁢ t ] 2 .