Dual metal Schottky diode
An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3 , a first metal 24 , a barrier layer 26 , and second metal 28 . Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3 , forming...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
06.12.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3 , a first metal 24 , a barrier layer 26 , and second metal 28 . Another embodiment of the invention is a method of manufacturing a Schottky diode 22 that includes providing a semiconductor substrate 3 , forming a barrier layer 26 over the semiconductor substrate 3 , forming a first metal layer 23 over the semiconductor substrate 3 , annealing the semiconductor substrate 3 to form areas 24 of reacted first metal and areas 23 of un-reacted first metal, and removing selected areas 23 of the un-reacted first metal. The method further includes forming a second metal layer 30 over the semiconductor substrate 3 and annealing the semiconductor substrate 3 to form areas 28 of reacted second metal and areas 30 of un-reacted second metal. |
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Bibliography: | Application Number: US20040814673 |