Self-repair method for nonvolatile memory devices with erasing/programming failure, and relative nonvolatile memory device

The memory device has a memory block, formed by a plurality of standard sectors and a redundancy portion; a control circuit, which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit for the data stored in the memory cells. The correctness verifying...

Full description

Saved in:
Bibliographic Details
Main Authors MICHELONI RINO, LOSAVIO ALDO
Format Patent
LanguageEnglish
Published 13.09.2005
Edition7
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:The memory device has a memory block, formed by a plurality of standard sectors and a redundancy portion; a control circuit, which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit for the data stored in the memory cells. The correctness verifying circuit is enabled by the control circuit and generates an incorrect-datum signal in the event of detection of at least one non-functioning cell. The control circuit moreover activates redundancy, enabling the redundancy portion and storing redundancy data in a redundancy-memory stage in response to detecting an incorrect datum. Various solutions implement column, row and sector redundancy, both in case of erasing and programming.
Bibliography:Application Number: US20030440043