Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool

• Main Authors: LACY MICHAEL S, BOYD JOHN M
• Format: Patent
• Language: English
• Published: 30.08.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING

A method of creating and using a polishing substrate having a coating layer is described. The method that includes providing a substrate having one or more predetermined patterns disposed on a surface of the substrate and coating the surface of the substrate with an abrasive to form a coated substrate conforming to the predetermined pattern. An apparatus enabling preparation and use of a fixed abrasive polishing member is described. The apparatus includes a patterned substrate, an abrasive coating a surface of the patterned substrate and a vacuum deposition chamber in which the abrasive is applied to the surface of the substrate. In addition, rather than a fixed abrasive, non-abrasive material may be applied to the surface of the patterned substrate, in which case, a conventional slurry may be used in planarization of an applied semiconductor wafer.