Semi-insulating bulk zinc oxide single crystal
A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5x103 ohm-centimeter (Omega-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single cr...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
30.08.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5x103 ohm-centimeter (Omega-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and processed into wafer form of specified thickness. A dopant in a concentration ranging from 1x1015 atoms per cubic centimeter (atoms/cc) to 5x1021 atoms/cc can increase resistivity of the crystal relative to intrinsic ZnO. The dopant can be lithium (Li), sodium (Na), copper (Cu), nitrogen (N), phosphorus (P), and/or manganese (Mn). |
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Bibliography: | Application Number: US20030602185 |