Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements
The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system ( 36 ) for producing and directing an extreme ultraviolet soft x-ray radiation lambda from an extreme ultraviolet soft x-ray source (...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
16.08.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system ( 36 ) for producing and directing an extreme ultraviolet soft x-ray radiation lambda from an extreme ultraviolet soft x-ray source ( 38 ); a mask stage ( 22 ) illuminated by the extreme ultraviolet soft x-ray radiation lambda produced by illumination stage and the mask stage ( 22 ) includes a pattern when illuminated by radiation lambda. A protection sub-system includes reflective multilayer coated Ti doped high purity SiO2 glass defect free surface ( 32 ) and printed media subject wafer which has a radiation sensitive surface. |
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Bibliography: | Application Number: US20020048138 |