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Summary:The projection lithographic method for producing integrated circuits and forming patterns with extremely small feature dimensions includes an illumination sub-system ( 36 ) for producing and directing an extreme ultraviolet soft x-ray radiation lambda from an extreme ultraviolet soft x-ray source ( 38 ); a mask stage ( 22 ) illuminated by the extreme ultraviolet soft x-ray radiation lambda produced by illumination stage and the mask stage ( 22 ) includes a pattern when illuminated by radiation lambda. A protection sub-system includes reflective multilayer coated Ti doped high purity SiO2 glass defect free surface ( 32 ) and printed media subject wafer which has a radiation sensitive surface.
Bibliography:Application Number: US20020048138