Dry etch process to edit copper lines
The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed throu...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
31.05.2005
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeF2 gas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition. |
---|---|
Bibliography: | Application Number: US20030249289 |