Plasma cleaning gas with lower global warming potential than SF6
A process for cleaning a deposit from an interior surface of a processing chamber includes generating a plasma from a cleaning gas including SO2F2 and contacting the interior surface with the plasma for a time sufficient to convert the deposit into a volatile product, thereby cleaning the deposit fr...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
03.05.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A process for cleaning a deposit from an interior surface of a processing chamber includes generating a plasma from a cleaning gas including SO2F2 and contacting the interior surface with the plasma for a time sufficient to convert the deposit into a volatile product, thereby cleaning the deposit from the interior surface, in which the process is conducted in the absence of SF6. The deposits, which may be removed by the process of the invention, include silicone, silicone oxide, silicone nitride, tungsten, copper and aluminum. |
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Bibliography: | Application Number: US20020237224 |