Semiconductor device and method of fabricating the same

A semiconductor device includes a first interconnection, an interlayer insulation film covering the first interconnection a contact hole provided in the interlayer insulation film and reaching the first interconnection, a first barrier metal and a tungsten plug provided in the contact hole, an oxide...

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Bibliographic Details
Main Author SAKAI KATSUHISA
Format Patent
LanguageEnglish
Published 29.03.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first interconnection, an interlayer insulation film covering the first interconnection a contact hole provided in the interlayer insulation film and reaching the first interconnection, a first barrier metal and a tungsten plug provided in the contact hole, an oxide film provided at a surface of the tungsten plug, and a second barrier metal and a second interconnection provided on the oxide film.
Bibliography:Application Number: US20030462699