Dual damascene semiconductor devices
A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle theta of radiation rays in the irradiating step with respect to a perpendicular directi...
Saved in:
| Main Author | |
|---|---|
| Format | Patent |
| Language | English |
| Published |
08.02.2005
|
| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle theta of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan theta>=H+H'/2(D+D') wherein D is a depth of the wiring slot, D' is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H' is the width of the wiring slot. |
|---|---|
| AbstractList | A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle theta of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan theta>=H+H'/2(D+D') wherein D is a depth of the wiring slot, D' is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H' is the width of the wiring slot. |
| Author | OKABE ICHIRO |
| Author_xml | – fullname: OKABE ICHIRO |
| BookMark | eNrjYmDJy89L5WRQcSlNzFFIScxNLE5OzUtVKE7NzUzOz0spTS7JL1JISS3LTE4t5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFiSCtJfGhwWYWpkZmhpZORsZEKAEAuOAojg |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| Edition | 7 |
| ExternalDocumentID | US6852619B2 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_US6852619B23 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 11:50:03 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_US6852619B23 |
| Notes | Application Number: US20020158011 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050208&DB=EPODOC&CC=US&NR=6852619B2 |
| ParticipantIDs | epo_espacenet_US6852619B2 |
| PublicationCentury | 2000 |
| PublicationDate | 20050208 |
| PublicationDateYYYYMMDD | 2005-02-08 |
| PublicationDate_xml | – month: 02 year: 2005 text: 20050208 day: 08 |
| PublicationDecade | 2000 |
| PublicationYear | 2005 |
| RelatedCompanies | SHARP KABUSHIKI KAISHA |
| RelatedCompanies_xml | – name: SHARP KABUSHIKI KAISHA |
| Score | 2.6118934 |
| Snippet | A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Dual damascene semiconductor devices |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050208&DB=EPODOC&locale=&CC=US&NR=6852619B2 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD6MKeqbTsV5ow-jb0W2NbF5KEJvDGEX3Cp7G02awEDbsXb49z0J6_RF30ICJxf4knzJOd8B6A09zgZiIJy-q5jj5oQ5mf7kVbng1GMZciL9NDCe0FHqvi7JsgXrJhbG6IR-GXFERJRAvNdmv978PGJFxreyeuJrrCpfkoUf2Q07JjrnpB0FfjybRtPQDkM_nduTN596RHOFAHfrI7xFP2swxO-BDkrZ_D5RknM4nqGxor6Aliw6cBo2idc6cDLe_3djcQ-96hJ60S77sPLsM9P6S9KqtFd7WWi51nJr5dIg_gqsJF6EIwe7Wx2mtkrnh4ENr6GNjF_egNWnzMVrAiGKKle4kivKPUY5F4pqfZoudP80c_tP2x2cGeVR7XTs3UO73u7kA56pNX80q_EN8wd7LA |
| link.rule.ids | 230,309,783,888,25576,76876 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1bS8MwFD6MKc43nYrz2ofRtyLbmtg8FKE3qq7dcK3srTRtAwNtx9rh3zcJ6_RF30ICJxf4knzJOd8BGE4MSsbZONNGOiOaniOipeKTl-UZxQZJOScSTwNBiP1Yf1miZQdWbSyM1An9kuKIHFEZx3sj9-v1zyOWI30r6we64lXVkxeZjtqyYyRyTqqOZbrzmTOzVds244UavpnYQIIrWHy3PuA37EcBBvfdEkEp698nincCh3NurGxOoVOUfejZbeK1PhwFu_9uXtxBrz6DobNNP5Q8_UyF_lKh1MKrvSqFXGu1UfJCIv4cFM-NbF_j3SX7qSXxYj-wyQV0OeMvLkEZYaLzawJCDDM90wvKMDUIpjRjWOjTDGDwp5mrf9ruoedHwTSZPoev13AsVUiFA7JxA91msy1u-fna0Du5Mt_kcX4f |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Dual+damascene+semiconductor+devices&rft.inventor=OKABE+ICHIRO&rft.date=2005-02-08&rft.externalDBID=B2&rft.externalDocID=US6852619B2 |