Dual damascene semiconductor devices

A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle theta of radiation rays in the irradiating step with respect to a perpendicular directi...

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Bibliographic Details
Main Author OKABE ICHIRO
Format Patent
LanguageEnglish
Published 08.02.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device has a wiring slot and two wiring layers connected by a via hole. The semiconductor device is formed using a photodegradable polymer film that degrades under UV radiation. An incidence angle theta of radiation rays in the irradiating step with respect to a perpendicular direction of a surface of the substrate, fulfills the relationship tan theta>=H+H'/2(D+D') wherein D is a depth of the wiring slot, D' is a thickness of the photoresist film, H is a diameter of the via hole in a opening of the wiring slot, and H' is the width of the wiring slot.
Bibliography:Application Number: US20020158011