Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing it

A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with on...

Full description

Saved in:
Bibliographic Details
Main Authors WARABISAKO MITSUNORI, MATSUMURA MASAKIYO, OANA YASUHISA, ABE HIROYUKI, KOSEKI HIDEO, YAMAMOTO YOSHITAKA
Format Patent
LanguageEnglish
Published 07.12.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CONVEYING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
HANDLING THIN OR FILAMENTARY MATERIAL
PACKING
PERFORMING OPERATIONS
PNEUMATIC TUBE CONVEYORS
SEMICONDUCTOR DEVICES
SHOP CONVEYOR SYSTEMS
STORING
TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING ORTIPPING
TRANSPORTING
Online AccessGet full text

Cover

More Information
Summary:A thin film semiconductor device and a method for producing it are described. In the thin film layer of semiconductor of the device, a plurality of large size single-crystalline grains of semiconductor are formed in a regulated configuration, and each of single crystalline grains is equipped with one unit of electric circuit having a gate electrode, a source electrode and drain electrode. Such regulated arrangement of large size single-crystalline grains in the semiconductor layer is realized by a process including a step of irradiating the layer of amorphous or polycrystalline semiconductor with energy beam such as excimer laser so that maximum irradiation intensity points and minimum irradiation intensity points are arranged regulatedly. The device can have a high mobility such as about 500 cm /V sec.
Bibliography:Application Number: US20020192850