Application of the CVD bilayer ARC as a hard mask for definition of the subresolution trench features between polysilicon wordlines

A method of removing organic anti-reflective coating (ARC) by ashing in an integrated circuit fabrication process can include providing an oxide-nitride-oxide (ONO) stack over a silicon substrate, providing a poly layer over the ONO stack, and patterning spaces in the poly layer using a patterned ca...

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Bibliographic Details
Main Authors PLAT MARINA V, GHANDEHARI KOUROS
Format Patent
LanguageEnglish
Published 16.11.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of removing organic anti-reflective coating (ARC) by ashing in an integrated circuit fabrication process can include providing an oxide-nitride-oxide (ONO) stack over a silicon substrate, providing a poly layer over the ONO stack, and patterning spaces in the poly layer using a patterned carbon bilayer ARC layer and a patterned hardmask layer. The patterned carbon bilayer ARC layer is ashed away before patterning spaces in the poly layer. Ashing the carbon bilayer ARC layer helps prevent damage to the ONO stack, improving the quality of the fabricated device.
Bibliography:Application Number: US20020166135