Active semiconductor backplanes

Relates to constructions of a backplane which comprises an array of addressable active elements 52 on a semiconductor substrate 51 for selectively energizing respective first electrodes 65 of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produc...

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Bibliographic Details
Main Author CROSSLAND WILLIAM A
Format Patent
LanguageEnglish
Published 02.11.2004
Edition7
Subjects
ADVERTISING
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:Relates to constructions of a backplane which comprises an array of addressable active elements 52 on a semiconductor substrate 51 for selectively energizing respective first electrodes 65 of the array, for example in a liquid crystal matrix cell. To reduce photo-induced degradation of images produced thereby (a) at least part of the region beneath a first electrode is adapted to act as a capacitor, for example a depletion layer 66 acting as a reverse biased diode, and/or (b) substantially the whole of each active element is covered by a metallic conductor (59, 60-coupled to row and column conductors). In a variant of (b) the array of active elements may covered by an insulating layer, and each active element is connected to a metal electrode on the insulating layer, the array of said metal electrodes thus formed covering more than 65% of the area of said array.
Bibliography:Application Number: US20020085140