Cleaning fluid and cleaning method for component of semiconductor-treating apparatus

A cleaning solution is used to remove a byproduct derived from a decomposed substance of a process gas containing C and F. The cleaning solution contains 75 wt % N-methyl-2-pyrrolidone, 15 wt % ethylene glycol monobutyl ether, 0.5 wt % surfactant, and 9.5 wt % water. The content of an alkali metal i...

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Main Authors YUASA KIYOSHI, NAGAYAMA NOBUYUKI, YAMADA HITOSHI, KAWAGUCHI SHINICHI, HIROTA KENICHI, YAMAGUCHI EIJI, SHIMODA TAKAHIRO
Format Patent
LanguageEnglish
Published 19.10.2004
Edition7
Subjects
ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES
BASIC ELECTRIC ELEMENTS
CANDLES
CHEMISTRY
DETERGENT COMPOSITIONS
DETERGENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FATTY ACIDS THEREFROM
METALLURGY
RECOVERY OF GLYCEROL
RESIN SOAPS
SEMICONDUCTOR DEVICES
SOAP OR SOAP-MAKING
USE OF SINGLE SUBSTANCES AS DETERGENTS
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Summary:A cleaning solution is used to remove a byproduct derived from a decomposed substance of a process gas containing C and F. The cleaning solution contains 75 wt % N-methyl-2-pyrrolidone, 15 wt % ethylene glycol monobutyl ether, 0.5 wt % surfactant, and 9.5 wt % water. The content of an alkali metal in the cleaning solution is set to be less than 10 ppb.
Bibliography:Application Number: US20000700704