Electron emission lithography apparatus and method using a selectively grown carbon nanotube

An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emissi...

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Bibliographic Details
Main Authors CHOI WON-BONG, YOO IN-KYEONG
Format Patent
LanguageEnglish
Published 21.09.2004
Edition7
Subjects
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Summary:An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.
Bibliography:Application Number: US20020160102