Aperture in a semiconductor material, and the production and use thereof

The invention relates to a method for producing an aperture (10) in a semiconductor material (12) comprising the following steps: Preparing a semiconductor wafer (14), for example, a (100)-oriented silicon wafer having an upper surface (16) and a lower surface (18); producing a cavity (20) with a si...

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Bibliographic Details
Main Authors KASSING RAINER, OESTERSCHULZE EGBERT, MIHALCEA CHRISTOPHE
Format Patent
LanguageEnglish
Published 21.09.2004
Edition7
Subjects
APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OR TREATMENT THEREOF
MEASURING
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PERFORMING OPERATIONS
PHYSICS
SCANNING-PROBE TECHNIQUES OR APPARATUS
SEMICONDUCTOR DEVICES
TESTING
TRANSPORTING
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Summary:The invention relates to a method for producing an aperture (10) in a semiconductor material (12) comprising the following steps: Preparing a semiconductor wafer (14), for example, a (100)-oriented silicon wafer having an upper surface (16) and a lower surface (18); producing a cavity (20) with a side wall (22) in the upper surface (16) of the semiconductor wafer (14) by partially etching said upper surface (16), whereby the cavity (20) comprises a closed bottom area (24) which faces the lower surface (18) and which preferably has, in particular, a convex or, in particular, a concave corner or edge or a curvature of this type. After depositing an oxide layer (26) on the semiconductor material (12) at least in the area of the cavity (20) by oxidizing the semiconductor material (12), whereby the oxide layer (26) preferably comprises an inhomogeneity (28) in the bottom area (24), the semiconductor material (14) is selectively etched back on the lower surface (18) of the semiconductor wafer (14) until at least the oxide layer (26) located in the bottom area (24) is exposed. Afterwards, the exposed oxide layer (26) is etched until it is at least severed. In addition, the invention relates to an aperture (10) in a semiconductor material (12) especially produced according to the inventive method, and to different uses of such an aperture (10).
Bibliography:Application Number: US20010786966