Method and structure for forming dielectric layers having reduced dielectric constants

The present invention is directed to a semiconductor structure including a semiconductor substrate having at least one overlying layer formed thereon. The at least one overlying layer including at least one layer of dielectric material. The at least one layer of dielectric material including a prote...

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Bibliographic Details
Main Authors LU HONG-QIANG, CATABAY WILBUR G, HSIA WEI-JEN
Format Patent
LanguageEnglish
Published 10.08.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention is directed to a semiconductor structure including a semiconductor substrate having at least one overlying layer formed thereon. The at least one overlying layer including at least one layer of dielectric material. The at least one layer of dielectric material including a protected region having a first dielectric constant and another porous region having a second dielectric constant wherein the value for the second dielectric constant is less than the first dielectric constant. The porous region having been formed by the implantation of a porosity inducing material into the porous region and subsequent annealing. A method for forming such structures is also included.
Bibliography:Application Number: US20020180661