Low temperature dielectric deposition to improve copper electromigration performance

• Main Authors: ERB DARRELL M, AVANZINO STEVEN C
• Format: Patent
• Language: English
• Published: 29.06.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The reliability and electromigration life-time of planarized metallization features, e.g., copper, inlaid in the surface of a layer of dielectric material, are enhanced by a chemical vapor deposition process for depositing a passivation layer over the metallization patterns which comprises maintaining on the upper surfaces of the metallization features, at or below a first temperature, an inhibiting film previously deposited thereon. The inhibiting film substantially inhibits oxide layer formation on the surface of the metallization features below the first temperature. Passivation layer deposition occurs at a second temperature higher than the first temperature such that the time interval between removal of the inhibiting film and formation of the passivation layer is short enough to substantially inhibit the formation of oxides on the surface of the metal feature.