Method of manufacturing a semiconductor device including a capacitor with a roughened-surface electrode

A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is formed on the rough-surfaced polysil...

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Bibliographic Details
Main Authors MORIHARA TOSHINORI, SHIMIZU MASAHIRO, MIYAJIMA TAKASHI
Format Patent
LanguageEnglish
Published 29.06.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device is provided. A polysilicon film and a rough-surfaced polysilicon film are formed on inter-layer insulating film including side and bottom surfaces of openings formed in inter-layer insulating film. A photoresist is formed on the rough-surfaced polysilicon film. The photoresist, the rough-surfaced polysilicon film and the polysilicon film that are located on the top surface of inter-layer insulating film are removed by the CMP method. The polysilicon film and rough-surfaced polysilicon film are etched in a predetermined atmosphere to make the position of the top end of storage nodes lower than the top surface of inter-layer insulating film.
Bibliography:Application Number: US20020302857