Voltage detection level correction circuit and semiconductor device

In a power supply voltage detection circuit using a reference potential generation circuit, as represented by a band gap reference circuit according to a prior art, the correction of dispersion in the detection level cannot be carried out after the completion of diffusion and assembly. Therefore, a...

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Bibliographic Details
Main Authors MANO YOSHITAKA, NAKANE JOJI
Format Patent
LanguageEnglish
Published 08.06.2004
Edition7
Subjects
CONTROLLING
INFORMATION STORAGE
PHYSICS
REGULATING
STATIC STORES
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Summary:In a power supply voltage detection circuit using a reference potential generation circuit, as represented by a band gap reference circuit according to a prior art, the correction of dispersion in the detection level cannot be carried out after the completion of diffusion and assembly. Therefore, a power supply voltage detection circuit 4 is provided with a reference potential generation circuit 1, a divided voltage potential generation circuit 2 and a differential amplification circuit 3 for comparing the divided voltage potential to the reference potential. Furthermore, a ferroelectric memory 5 which stores correction data for correcting the reference potential, a data latch circuit 7 for storing correction data that has been read out, and a microcomputer logic unit 6 for controlling ferroelectric memory 5 as well as data latch circuit 7 are provided. The reference potential is altered according to correction data so that dispersion in the power supply voltage detection level is reduced.
Bibliography:Application Number: US20020307376