Apparatus for inspecting defects of devices and method of inspecting defects

Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high...

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Bibliographic Details
Main Authors SUGIMOTO ARITOSHI, SEKIHARA ISAMU, ISHITANI TOHRU, TOMIMATSU SATOSHI, AZUMA JUNZO, KOIKE HIDEMI, UMEMURA KAORU
Format Patent
LanguageEnglish
Published 11.05.2004
Edition7
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Summary:Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).
Bibliography:Application Number: US20010936941