Method of making an edge seal for a semiconductor device
An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interle...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
11.05.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric. |
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Bibliography: | Application Number: US20020078861 |