Semiconductor device and method of fabrication

The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer...

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Bibliographic Details
Main Authors CHAKRABARTI UTPAL KUMAR, ONAT BORA M, ROY BISWANATH, WU PING, ROBINSON KEVIN CYRUS
Format Patent
LanguageEnglish
Published 11.05.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is formed over the low dielectric constant layer by a low temperature deposition, such as ion beam assistance deposition. A metal layer can then be formed over the additional layer using lift-off techniques. The metal layer can be patterned to form a bond pad which may be displaced from the area over the active region. Wire bonds can be made on the bond pad using ultrasonic energy.
Bibliography:Application Number: US20020156429