Photoresist composition for deep UV radiation containing an additive
The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solutio...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
20.04.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image. |
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Bibliography: | Application Number: US20010037161 |