Dielectric composition for high frequency resonators

A dielectric composition is based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant, epsilon, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (tauf) of its resonance frequency but c...

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Bibliographic Details
Main Authors OTSUKA JUN, YAMAGIWA KATSUYA, MATSUMIYA MASAHIKO, ITAKURA KAZUHISA, OBA TAKASHI, KASASHIMA TAKASHI, SATO MANABU
Format Patent
LanguageEnglish
Published 13.04.2004
Edition7
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CABLES
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
CONCRETE
CONDUCTORS
ELECTRICITY
INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS
INORGANIC CHEMISTRY
INSULATORS
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SLAG
TREATMENT OF NATURAL STONE
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Summary:A dielectric composition is based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant, epsilon, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (tauf) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn.
Bibliography:Application Number: US20020170413