Dielectric composition for high frequency resonators
A dielectric composition is based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant, epsilon, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (tauf) of its resonance frequency but c...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
13.04.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A dielectric composition is based on a BaO-MgO-Nb2O5 system material (BMN system material) having a dielectric constant, epsilon, of about 30, a large Q-value (no-load quality coefficient) and a comparatively small absolute value of the temperature coefficient (tauf) of its resonance frequency but containing no expensive Ta. The dielectric material has a composite perovskite crystal structure as the main crystal phase, wherein a predetermined amount of KNbO3 is added to a BMN system material. The high frequency characteristics can be further improved by partially replacing Nb with Sb and partially replacing the B site of the perovskite crystal structure with Sn. |
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Bibliography: | Application Number: US20020170413 |