Use of an alloying element to form a stable oxide layer on the surface of metal features

• Main Authors: ERB DARRELL M, MARATHE AMIT P
• Format: Patent
• Language: English
• Published: 06.04.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The electromigration resistance of planarized metallization patterns, for example copper, inlaid in the surface of a layer of dielectric material, is enhanced by a process comprising blanket-depositing on the planarized, upper surfaces of the metallization features and the dielectric layer at least one alloying layer comprising at least one alloying element for the metal of the features, and diffusing the at least one alloying element within the metallization features to effect alloying therewith. The at least one alloying element diffused within the metallization features, under conditions wherein an oxide layer forms on the surface of the metallization features, forms a stable oxide layer on the surface of the metallization features. The stable oxide layer reduces electromigration from the metallization features along the oxide layer.