Method for improving reliability in trench structures

The invention describes an improved method of fabricating trench structures. This method enhances trench structure reliability by reducing dielectric breakdown in high voltage applications, for example. The invention uses etching and thermal oxidation techniques to round and smooth the corners at th...

Full description

Saved in:
Bibliographic Details
Main Authors KASA SHANNON D, KAMIN NACKIEB M, CLAYTON STANLEY R, RUSSELL STEPHEN D
Format Patent
LanguageEnglish
Published 23.03.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The invention describes an improved method of fabricating trench structures. This method enhances trench structure reliability by reducing dielectric breakdown in high voltage applications, for example. The invention uses etching and thermal oxidation techniques to round and smooth the corners at the bottom of the trench structure. The smoothing of the trench corners reduces the electrical fields that cause insulator breakdown.
Bibliography:Application Number: US20020207419