Method for forming a semiconductor device structure in a semiconductor layer

A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus...

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Main Authors ROSSOW MARC, STEIMLE ROBERT F, PHAM DANIEL THANH-KHAC, VANDOOREN ANNE, GARCIA RICARDO, KOH AL T, REID KIMBERLY G, GEREN JAMES P, LII YEONG-JYH T
Format Patent
LanguageEnglish
Published 10.02.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.
Bibliography:Application Number: US20020206475