Amplifying solid-state imaging device, and method for driving the same
A plurality of pixels, each including a photodiode that can make a transition from a first potential state (reset state) into a second potential state variable with the quantity of incident light or vice versa, are provided. A unit compensator includes first and second storage devices implementable...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
13.01.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A plurality of pixels, each including a photodiode that can make a transition from a first potential state (reset state) into a second potential state variable with the quantity of incident light or vice versa, are provided. A unit compensator includes first and second storage devices implementable as respective MOS capacitors. The first storage device stores thereon charge in a quantity proportional to a difference between a signal potential phis corresponding to the second potential state of each pixel and a reference potential phi0. The second storage device stores thereon charge in a quantity proportional to a difference between a fixed potential phid and the reference potential phi0. When a reset potential phir is supplied from an associated pixel, these storage devices are short-circuited with each other, thereby transferring charge in a quantity proportional to a potential difference (phis-phir) between these storage devices. After these storage devices have been electrically isolated from each other, the potential difference (phis-phir) is sensed based on the quantity of residual charge in the second storage device and then output. In this manner, a variation in threshold voltage among the amplifying transistors within the pixels can be compensated for. |
---|---|
Bibliography: | Application Number: US19990432125 |