Ti liner for copper interconnect with low-k dielectric

In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has t...

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Main Authors LU HSIAO-LING, SIMON ANDREW HERBERT, KLEPEIS STANLEY J, MARINO JEFFREY R, WANG YUN-YU, WONG KWONG HON, CLEVENGER LARRY, YANG CHIHAO
Format Patent
LanguageEnglish
Published 09.12.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.
Bibliography:Application Number: US20020287155