Dual hardmask single damascene integration scheme in an organic low k ILD

• Main Authors: STETTER MICHAEL, KALTALIOGLU ERDEM, COWLEY ANDY
• Format: Patent
• Language: English
• Published: 28.10.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Process of making a semiconductor using dual inorganic hardmask in single damascene process integration scheme in an organic low k interlayer dielectric (ILD) by:providing semiconductor substrate;depositing organic low k ILD layer on substrate;forming hardmask 1 on organic low k ILD layer and forming sacrificial hardmask 2 on hardmask 1;forming a patterned photoresist layer on sacrificial hardmask 2;etching selective to sacrificial hardmask 2 and stripping photoresist;etching of hardmask 1 in which the etch is selective to the organic low k ILD layer;depositing a liner or conformal barrier layer over the substrate, organic low k ILD layer, hardmask 1 and hardmask 2;forming a plated metal layer over the liner or conformal barrier layer; andremoving metal layer and removing liner with simultaneous removal of sacrificial hardmask 2 so that facets in sacrificial hardmask 2 are removed during liner/sacrificial hardmask 2 removal.