Synthetic anti-parallel/parallel/pinned layer spin valve

A spin valve structure is described that has greater pinned layer robustness than is found in spin valves of the existing known art, making it well suited for use in high density recording. This has been achieved by a using a modified pinned layer that is a laminate of five layers-a first layer of c...

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Bibliographic Details
Main Authors HORNG CHENG T, TONG RU-YING, LI MIN, LIAO SIMON H, JU KOCHAN
Format Patent
LanguageEnglish
Published 07.10.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
MAGNETS
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
TESTING
TRANSFORMERS
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Summary:A spin valve structure is described that has greater pinned layer robustness than is found in spin valves of the existing known art, making it well suited for use in high density recording. This has been achieved by a using a modified pinned layer that is a laminate of five layers-a first layer of cobalt-iron, a layer of ruthenium, a second layer of cobalt-iron, a layer of nickel-chromium, and a third layer of cobalt-iron. The second layer of cobalt-iron should be about twice the thickness of the third cobalt-iron layer. The sum of the second and third cobalt-iron layer thicknesses may be greater or smaller than the thickness of the first cobalt-iron layer. A process for manufacturing the structure is also described.
Bibliography:Application Number: US20010764231