Method for the production of an epitaxially grown semiconductor wafer

A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:(a) preparing a substrate wafer having a polished front and a specific thickness;(b) pretreating the front of t...

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Bibliographic Details
Main Authors STORCK PETER, MESSMANN KLAUS, SCHMOLKE RUEDIGER, SCHAUER REINHARD, OBERMEIER GUENTHER, SIEBERT WOLFGANG, GRAEF DIETER
Format Patent
LanguageEnglish
Published 07.10.2003
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A method for the production of a semiconductor wafer having a front and a back and an epitaxial layer of semiconductor material deposited on the front, includes the following process steps:(a) preparing a substrate wafer having a polished front and a specific thickness;(b) pretreating the front of the substrate wafer in the presence of HCl gas and a silane source at a temperature of from 950 to 1250 degrees Celsius in an epitaxy reactor, the thickness of the substrate wafer remaining substantially unchanged; and(c) depositing the epitaxial layer on the front of the pretreated substrate wafer.
Bibliography:Application Number: US20010864994