Non-volatile memory circuit

A memory circuit has a volatile memory portion and two ferroelectric capacitors. The volatile memory portion has two internal nodes and the ferroelectric capacitors are coupled in series to form a common node and two extreme poles. One of the two internal nodes is connected to the common node and th...

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Bibliographic Details
Main Authors LUNG HSIANG-LAN, CHEN SHUE-SHUEN
Format Patent
LanguageEnglish
Published 01.07.2003
Edition7
Subjects
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Summary:A memory circuit has a volatile memory portion and two ferroelectric capacitors. The volatile memory portion has two internal nodes and the ferroelectric capacitors are coupled in series to form a common node and two extreme poles. One of the two internal nodes is connected to the common node and the two poles couple with two plates lines, respectively. The polarization of the two capacitors is used to store the volatile memory portion data. When power is lost from the memory circuit, the last data state of the two internal nodes is stored into the ferroelectric capacitors. When power is applied to the memory circuit again, one of the two ferroelectric capacitors changes its polarization state and has a larger capacitance, which results in the voltage difference in the two internal nodes so that the last data state can be restored to the volatile memory portion.
Bibliography:Application Number: US20020036361