Power component bearing interconnections

A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive track extending above the substrate between the second region and the...

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Bibliographic Details
Main Author ROY MATHIEU
Format Patent
LanguageEnglish
Published 24.06.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive track extending above the substrate between the second region and the wall. The component includes a succession of trenches extending in the substrate under the track and perpendicularly to this track, each trench being filled with an insulator.
Bibliography:Application Number: US19990421130