Method for forming a bottom spin valve magnetoresistive sensor element
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sen...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
24.06.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength. |
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Bibliography: | Application Number: US20020037812 |