Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors

• Main Authors: URDAHL RANDALL S, NARWANKAR PRAVIN K, MENDOZA ANDREA M, ATHREYA SHANKARRRAM A, SINENSKY ASHER K
• Format: Patent
• Language: English
• Published: 03.06.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a method of integrating tantalum oxide into an MIM capacitor for a semiconductor device, comprising the step of vapor-depositing the tantalum oxide from an oxygen-free liquid precursor and under process conditions comprising a deposition temperature of less than about 500° C. and a deposition pressure of less than about 96 Torr, wherein the tantalum oxide is integrated into the MIM capacitor. Also provided is a method of forming an MIM capacitor comprising the step of integrating a tantalum oxide dielectric film with a tantalum nitride or a titanium nitride bottom electrode deposited on a substrate and a titanium nitride top electrode thereby forming an MIM capacitor.