Methods of forming integrated circuit capacitors having electrodes therein that comprise conductive plugs

Disclosed is a capacitor of semiconductor integrated circuit and a method for fabricating the same by which characteristic of a capacitor and bit resolution can be improved to thereby obtain an improved analog device of high accuracy. The capacitor of semiconductor integrated circuit includes a cond...

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Bibliographic Details
Main Authors KIM DONG-WOO, YU SUN-IL, LEE HYAE-RYOUNG
Format Patent
LanguageEnglish
Published 27.05.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a capacitor of semiconductor integrated circuit and a method for fabricating the same by which characteristic of a capacitor and bit resolution can be improved to thereby obtain an improved analog device of high accuracy. The capacitor of semiconductor integrated circuit includes a conductive lower electrode formed on a predetermined portion of an insulating substrate, an insulating layer formed on the insulating substrate including the conductive lower electrode and provided with a via hole so that the surface of the lower electrode is exposed in its predetermined portion, a dielectric layer formed on the insulating layer and in the via hole, and an conductive upper electrode formed on the predetermined portion of the dielectric layer including the via hole to have a piled structure such as "conductive plug/conductive layer pattern".
Bibliography:Application Number: US20000733716