Production of diaphragms over a cavity by grinding to reduce wafer thickness

A method of manufacturing a diaphragm utilising a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed.

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Bibliographic Details
Main Authors MITCHELL S J NEIL, GAMBLE HAROLD S, FITZGERALD STEPHEN PETER, PROCHASKA ANDRZEJ
Format Patent
LanguageEnglish
Published 22.04.2003
Edition7
Subjects
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Summary:A method of manufacturing a diaphragm utilising a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed.
Bibliography:Application Number: US20010881744