Production of diaphragms over a cavity by grinding to reduce wafer thickness
A method of manufacturing a diaphragm utilising a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed.
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
22.04.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a diaphragm utilising a precision grinding technique after etching a cavity in a wafer. A technique for preventing distortion of the diaphragm based on use of a sacrificial layer of porous silicon is disclosed. |
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Bibliography: | Application Number: US20010881744 |