Manufacturing method for making a microwave semiconductor device with improved heat discharge and electric properties

In this disclosure, the semiconductor is directly mounted on the substrate plate of a package. According to this configuration, heat generated by the semiconductor chip is directly discharged, an excellent heat discharge property is realized. Moreover, the circuit is securely grounded and an excelle...

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Bibliographic Details
Main Authors TAKAGI KAZUTAKA, HIRATA SEIICHI
Format Patent
LanguageEnglish
Published 04.03.2003
Edition7
Subjects
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Summary:In this disclosure, the semiconductor is directly mounted on the substrate plate of a package. According to this configuration, heat generated by the semiconductor chip is directly discharged, an excellent heat discharge property is realized. Moreover, the circuit is securely grounded and an excellent electric property is obtained.
Bibliography:Application Number: US20020094651