Manufacturing method for making a microwave semiconductor device with improved heat discharge and electric properties
In this disclosure, the semiconductor is directly mounted on the substrate plate of a package. According to this configuration, heat generated by the semiconductor chip is directly discharged, an excellent heat discharge property is realized. Moreover, the circuit is securely grounded and an excelle...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
04.03.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | In this disclosure, the semiconductor is directly mounted on the substrate plate of a package. According to this configuration, heat generated by the semiconductor chip is directly discharged, an excellent heat discharge property is realized. Moreover, the circuit is securely grounded and an excellent electric property is obtained. |
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Bibliography: | Application Number: US20020094651 |