Pattern formation method
A resist film is formed by applying, on a semiconductor substrate, a chemically amplified resist including an acid generator of an onium salt having a halogen atom both in the cation and the anion thereof. The resist film is irradiated with a F2 laser beam with a wavelength of a 157 nm band or an Ar...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
18.02.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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