Pattern formation method
A resist film is formed by applying, on a semiconductor substrate, a chemically amplified resist including an acid generator of an onium salt having a halogen atom both in the cation and the anion thereof. The resist film is irradiated with a F2 laser beam with a wavelength of a 157 nm band or an Ar...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
18.02.2003
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A resist film is formed by applying, on a semiconductor substrate, a chemically amplified resist including an acid generator of an onium salt having a halogen atom both in the cation and the anion thereof. The resist film is irradiated with a F2 laser beam with a wavelength of a 157 nm band or an Ar2 laser beam with a wavelength of a 126 nm band for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern. |
---|---|
Bibliography: | Application Number: US20000515334 |