Collimated deposition apparatus

• Main Authors: ACTOR GERI M, HOFFMAN, JR. VANCE E, COCHRAN RONALD R
• Format: Patent
• Language: English
• Published: 18.02.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Sputtering apparatus using a collimating filter to limit the angles at which sputtered particles will reach the surface of the substrate or workpiece being processed is shown. The sputtering apparatus relies on a combination of a planar sputter source larger in size than the workpiece and having highly uniform emission characteristics across the much of its surface, including its center; a collimating filter; and low operating pressure to avoid scattering of sputtered atoms after they have passed through the collimation filter. In the preferred embodiment, the collimation filter is made from a material which has substantially the same thermal coefficient of expansion as the film which is deposited on the substrate. In one specific embodiment, a titanium collimation filter is used when the sputtering system is used to deposit films of titanium, titanium nitride or titanium/tungsten alloy.