Thin film transistor substrate and process for producing the same

A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo-W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprisi...

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Bibliographic Details
Main Authors SATOU TAKESHI, TAKAHASHI TAKUYA, KATOU TOMOYA, KANEKO TOSHIKI, IKEDA HAJIME
Format Patent
LanguageEnglish
Published 28.01.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo-W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.
Bibliography:Application Number: US20010931761