Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making same

A compact metal oxide semiconductor (MOS) device has its channel region formed by the lateral extension of two high voltage (HV) regions. The two HV regions are implanted into a well region and, as a result of an annealing process, undergo outdiffusion and merge together into a single channel region...

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Bibliographic Details
Main Authors QUDDUS MOHAMMED TANVIR, HALL JEFFERSON W, HOSSAIN ZIA, IMAM MOHAMED, FULTON JOE
Format Patent
LanguageEnglish
Published 14.01.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A compact metal oxide semiconductor (MOS) device has its channel region formed by the lateral extension of two high voltage (HV) regions. The two HV regions are implanted into a well region and, as a result of an annealing process, undergo outdiffusion and merge together into a single channel region. The resulting channel region has a dopant concentration that is less than the dopant concentrations of the individual HV regions. The compact MOS device exhibits a low threshold voltage characteristic.
Bibliography:Application Number: US20000690876