Bipolar transistor manufacturing method

A method of manufacturing a bipolar transistor in an N-type semiconductor substrate, including the steps of depositing a first base contact polysilicon layer and doping it; depositing a second silicon oxide layer; forming in the first and second layers an opening; annealing to form a third thin oxid...

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Bibliographic Details
Main Authors GRIS YVON, TROILLARD GERMAINE
Format Patent
LanguageEnglish
Published 14.01.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a bipolar transistor in an N-type semiconductor substrate, including the steps of depositing a first base contact polysilicon layer and doping it; depositing a second silicon oxide layer; forming in the first and second layers an opening; annealing to form a third thin oxide layer and harden the second oxide layer; implanting a P-type dopant; depositing a fourth silicon nitride layer; depositing a fifth silicon oxide layer and etching it; anisotropically etching the fifth, fourth, and third layers; performing cleanings during which the fifth layer is reetched and takes a flared profile; depositing a sixth polysilicon layer; and implanting an N-type dopant.
Bibliography:Application Number: US20000517241