Method for the growing of single crystals

To obtain large, high-quality crystals of a metal orthophosphate, in particular GaPO4 or AlPO4, from a nutrient solution with the use of seeds, a seed crystal is used having at least two rod- or wafer-shaped legs which form an angle with each other and define a main growth region, and which are posi...

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Bibliographic Details
Main Authors WALLNOEFER WOLFGANG, THANNER HERBERT, KRISPEL FERDINAND, KREMPL PETER
Format Patent
LanguageEnglish
Published 10.12.2002
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:To obtain large, high-quality crystals of a metal orthophosphate, in particular GaPO4 or AlPO4, from a nutrient solution with the use of seeds, a seed crystal is used having at least two rod- or wafer-shaped legs which form an angle with each other and define a main growth region, and which are positioned eccentrically in the single crystal grown. Contagious faces of two seed legs, which have been chosen for crystal growing, enclose an angle <180°. In this way the yield of the high-quality crystal region will be increased.
Bibliography:Application Number: US20000748213