Stacked LDD high frequency LDMOSFET

A novel silicon RF LDMOSFET structure based on the use of a stacked LDD, is disclosed. The LDD has been modified from a single layer of N type material to a stack of three layers. These are upper and lower N type layers with a P type layer between them. The upper N type layer is heavily doped to red...

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Bibliographic Details
Main Authors CAI JUN, FOO PANG DOW, BALASUBRAMANIAN NARAYANAN
Format Patent
LanguageEnglish
Published 03.12.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A novel silicon RF LDMOSFET structure based on the use of a stacked LDD, is disclosed. The LDD has been modified from a single layer of N type material to a stack of three layers. These are upper and lower N type layers with a P type layer between them. The upper N type layer is heavily doped to reduce the on-resistance of the device, while the lower N type layer is lightly doped to reduce the output capacitance, thereby improving the high frequency performance. The middle P layer is heavily doped which allows it to bring about pinch-off of the two N layers, thereby raising the device's breakdown voltage. A process for manufacturing the device, as well as experimental data concerning its performance are also given.
Bibliography:Application Number: US20010849675